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proprietary and confidential a microchip technology company ?2012 silicon storage technology, inc. ds-75003c 08/12 data sheet www.microchip.com features ? high gain: C typically 25 db gain across 2.4~2.5 ghz ? high linear output power: C >26 dbm p1db - single-tone measurement - please refer to absolute maximum stress ratings on page 5 C meets 802.11g ofdm acpr requirement up to 21.5 dbm C meets 802.11b acpr requirement up to 22.5 dbm C ~3% added evm up to 18 dbm for 54 mbps 802.11g signal C 17 dbm at 1.8% evm, 802.11ac, 256 qam, 2.4 ghz ? high power-added efficiency/low operating cur- rent for 802.11b/g/n applications C ~32%/135 ma @ p out = 21.5 dbm for 802.11g C ~36%/150 ma @ p out = 22.5 dbm for 802.11b ? single-pin low i ref power-up/down control Ci ref <2 ma ? low idle current for high-efficiency operation C ~50 ma i cq ? high-speed power-up/down control C turn on/off time (10%- 90%) <100 ns C typical power-up/down delay with driver delay included <200 ns ? low shut-down current (~2 a) ? limited variation over temperature C ~1 db gain/power variation between -20c to +85c ? excellent on-chip power detection C >15 db dynamic range on-chip power detection C temperature and vswr insensitive ? simple output matching ? packages available C 8-contact xson C 2mm x 2mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11b/g/n/ac) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e the sst12lp18e is a versatile power amplifier based on the highly-reliableingap/gaas hbt technology. the sst12lp18e is a 2.4 ghz high-efficiency power amplifier designed in compliance with ieee 802.11b/g/n/ac applications. it typically provides 25 db gain with 32% power-added efficiency, while meeting 802.11g spectrum mask at 21.5 dbm. the sst12lp18e can be configured for high-linearity for 802.11ac operation or for high-power, high-efficiency operation. this power amplifier also features easy board-level usage along with high- speed power-up/down control through a single reference voltage pin and is offered in a 8-contact xson package. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 2 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company product description the sst12lp18e is a versatile power amplifier based on the highly-reliable ingap/gaas hbt tech- nology. the sst12lp18e is a 2.4 ghz high-efficiency power amplifier designed in compliance with ieee 802.11b/g/n/ac applications. it typically provides 25 db gain with 32% power-added efficiency (pae) @ pout = 21.5 dbm for 802.11g and 36% pae @ pout = 22.5 dbm for 802.11b. the sst12lp18e has e xcellent linearity, typically ~3% added evm at 18 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dbm. sst12lp18e can also be configured for high-linearity with evm <1.8% at typically 17 dbm for 802.11ac operation. the sst12lp18e also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. ultra-low reference current (total i ref ~2 ma) makes the sst12lp18e controllable by an on/off switching signal directly from the baseband chip. these fea- tures, coupled with low operating current, make the sst12lp18e ideal for the final stage power ampli- fication in battery-powered 802.11b/g/n/ac wlan transmitter applications. the sst12lp18e has an excellent on-chip, single-ended power detector, which features wide-range (>15 db) with db-wise linear operation. the excellent on-chip power detector is both temperature and vswr insensitive; therefore, it provides a reliable solution to board-level power control. the sst12lp18e is off ered in 8-contact xson package. see figure 2 for pin assignments and table 1 for pin descriptions. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 3 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company functional blocks figure 1: functional block diagram 4 3 2 1 5 6 7 8 bias circuit vcc1vccb vref rfin rfout rfout vcc2 f1.0 det downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 4 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company pin assignments figure 2: pin assignments for 8-contact xson pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low inductance gnd pad v cc1 1 power supply pwr power supply, 1 st stage rf in 2 i rf input, dc decoupled v ccb 3 power supply pwr supply voltage for bias circuit vref 4 pwr 1 st and 2 nd stage idle current control det 5 o on-chip power detector rfout 6 o rf output rfout 7 o rf output v cc2 8 power supply pwr power supply, 2 nd stage t1.0 75003 4 3 2 1 5 6 7 8 vcc1vccb vref rfin rfout rfout vcc2 top view rf & dc ground 0 (contacts facing down) det f2.0 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 5 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company electrical specifications the dc and rf specifications for the power amplifier are specified below. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 13 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under absolute maximum stress ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pin 2 (p in )..................................................... +5dbm average output power (p out ) 1 ................................................ +26dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. supply voltage at pins 1, 3, and 8(v cc ) .................................... -0.3v to +4.2v reference voltage to pin 4 (v ref )......................................... -0.3v to +3.3v dc supply current (i cc ) 2 ..................................................... 300ma 2. measured with 100% duty cycle 54 mbps 802.11g ofdm signal operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 2: operating range range ambient temp v cc industrial -40c to +85c 3.3v t2.1 75003 table 3: dc electrical characteristics at 25c for high-linearity configurations 1 1. see figure 8 symbol parameter min. typ max. unit v cc supply voltage at pins 1,3,and 8 3.0 3.3 3.6 v i cq idle current to meet evm ~1.8% @ 17 dbm output power with 802.11g ofdm 54 mbps signal 110 ma i cc current consumption @ 18 dbm output power with 802.11g ofdm 54 mbps signal 140 current consumption to meet 802.11g ofdm 6 mbps spectrum mask @ 21.5 dbm output power 170 ma current consumption to meet 802.11b dsss 1 mbps spectrum mask @ 22.5 dbm output power 180 ma v reg reference voltage with 0 ? resistor 2.7 2.8 2.9 v t3.1 75003 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 6 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company table 4: dc electrical characteristics at 25c for high-efficiency configurations 1 symbol parameter min. typ max. unit v cc supply voltage at pins 1,3,and 8 3.0 3.3 3.6 v i cq idle current to meet evm ~3% @ 18 dbm output power with 802.11g ofdm 54 mbps signal 50 ma i cc current consumption @ 18 dbm output power with 802.11g ofdm 54 mbps signal 95 current consumption to meet 802.11g ofdm 6 mbps spectrum mask @ 21.5 dbm output power 135 ma current consumption to meet 802.11b dsss 1 mbps spectrum mask @ 22.5 dbm output power 150 ma v reg reference voltage with 360 ? resistor 2.7 2.8 2.9 v t4.1 75003 1. see figure 14 table 5: rf electrical characteristics at 25c symbol parameter min. typ max. unit f l-u frequency range 2412 2484 mhz g small signal gain 24 25 db g var1 gain variation over band (2412C2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db evm evm@ 18 dbm output power with 802.11g ofdm 54 mbps signal 1 1. see figure 14 3.0 % evm@ 17 dbm output power with 802.11ac 20 mhz bw 2 2. see figure 8 1.8 % p out output power to meet 802.11g ofdm 6 mbps spectrum mask 20.5 21.5 dbm output power to meet 802.11b dsss 1 mbps spectrum mask 21.5 22.5 dbm 2f, 3f, 4f, 5f harmonics at 23 dbm, without external filters -30 dbc t5.2 75003 table 6: typical performance with different bias options for high-efficiency configuration v reg (v) r1 1 ( ? ) 1. see figure 14 i cq 2 (ma) 2. at room temperature i cc @p out = 18 dbm 2 (ma) t ypical performance with each biased option 2.85 500 45 95 meet added evm < 3% up to 18 dbm output power at -40oc 2.80 360 50 95 meet added evm < 3% up to 18 dbm output power at -40oc 2.70 180 50 95 meet added evm < 3% up to 18 dbm output power at -20oc 2.70 33 72 110 meet added evm < 3% up to 18 dbm output power at -40oc 2.70 0 82 120 meet added evm < 3% up to 18 dbm output power at -40oc t6.1 75003 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 7 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 3: s-parameters s11 versus frequency frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) s-parms.1.1 s12 versus frequency s21 versus frequency s22 versus frequency - 30 - 25 - 20 - 15 - 10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -30 -25 -20 -15 -10 -5 0 0 . 01 . 02 . 03 . 04 . 05 . 06 . 07 . 08 . 0 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 8 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-linearity configuration for 802.11b/g/n/ac typical performance characteristics test conditions: v cc = 3.3v, v ref = 2.8v, t a = 25c, 54 mbps 802.11g ofdm signal; equalizer training setting using channel estimation sequence only figure 4: evm versus output power figure 5: power gain versus output power 75003 f13.0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 evm (%) output power (dbm) evm versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 75003 f14.0 10 12 14 16 18 20 22 24 26 28 30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 power gain (db) output power (dbm) power gain versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 9 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-linearity configuration (continued) figure 6: total current consumption for 802.11g operation versus output power figure 7: detector characteristics versus output power 75003 f15.0 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 supply current (ma) output power (dbm) supply current versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 75003 f16.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 detector voltage (v) output power (dbm) detector voltage versus output power freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 10 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-linearity configuration (continued) figure 8: typical schematic for high-linearity 802.11b/g/n/ac applications 75003 f17.0 10 f vcc f 6.8 nh / 0603 0.1 f 0.1 0.1 50 rfin f rfout 100 pf 1.8 pf 50 1.0 nh 0.1 vdet 100 pf vreg r1 = 0 test conditions: vcc = 3.3 v vreg = 2.80 v 12lp18e 2x2 8l xson top view 4 3 2 1 5 6 7 8 100 pf downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 11 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-efficiency configuration for 802.11b/g/n operation typical performance characteristics test conditions: v cc = 3.3v, v ref = 2.8v, t a = 25c, 54 mbps 802.11g ofdm signal; equalizer training setting using channel estimation sequence only figure 9: evm versus output power figure 10: power gain versus output power f4.1 evm versus output power output power (dbm) evm (%) 0 1 2 3 4 5 6 7 8 9 10 012345678910111213141516171819202122232425 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz f5.0 power gain versus output power output power (dbm) power gain (db) 10 12 14 16 18 20 22 24 26 28 30 012345678910111213141516171819202122232425 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 12 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-efficiency configuration (continued) figure 11: total current consumption for 802.11g operation versus output power figure 12: pae versus output power f6.0 supply current versus output power output power (dbm) supply current (ma) 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 012345678910111213141516171819202122232425 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz f7.0 pae versus output power output power (dbm) pae (%) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 012345678910111213141516171819202122232425 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 13 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-efficiency configuration (continued) figure 13: detector characteristics versus output power f8 0 detector voltage versus output power output power (dbm) detector voltage (v) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 14 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company high-efficiency configuration (continued) figure 14: typical schematic for high-efficiency 802.11b/g/n applications f12.0 10 f vcc f 10 nh / 0603 0.1 f 0.1 0.1 50 rfin f rfout 100 pf 1.5 pf 50 1.0 nh 0.1 vdet 100 pf vreg r1 = 360 test conditions: vcc = 3.3 v vreg = 2.80 v 12lp18e 2x2 8l xson top view 4 3 2 1 5 6 7 8 100 pf downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 15 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company product ordering information valid combinations for sst12lp18e sst12lp18e -qx8e sst12lp18e evaluation kits sst12lp18e -qx8e-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lp 18e - qx8e xx xx xxx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier 8 = 8 contact package type qx = xson product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix e denotes non-pb solder. sst non-pb solder devices are rohs compliant. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 16 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company packaging diagrams figure 15: 8-contact extremely-thin small outline no-lead (xson) sst package code: qx8 top view bottom view side view 0.500.41 0.08 pin # 1 2.00 0.10 pin #1 (laser engraved see note 2) 2.00 0.10 0.40 bsc 0.3 0.2 8-xson-2x2-qx8-4.0 1mm 0.05 max 0.75 see notes 3 and 4 1.60 note: 1. similar to jedec jep95 xqfn/xson variants, though number of contacts and some dimensions are different. 2. the topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. 3. from the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 4. the external paddle is electrically connected to the die back-side and to v ss . this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 5 untoleranced dimensions are nominal target dimensions. 6. all linear dimensions are in millimeters (max/min). 1.55 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds-75003c 08/12 17 2.4 ghz high-efficiency, high-gain power amplifier sst12lp18e data sheet a microchip technology company table 7: revision history revision description date a ? initial release of data sheet mar 2011 b ? revised electrical specifications on page 5 from 4.0v max stress to 4.6v ? updated figure 9 on page 11 to show sequence only evm response mar 2012 c ? added figures 9-8 on pages 11-10 to provide high-linearity information ? updated table 5 on page 6 ? updated figure 15 on page 16 to reflect new pin 1 indicator ? clarified features on page 1 jul 2012 ? 2012 silicon storage technology, incCa microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-62076-482-4 downloaded from: http:///

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